MOSFET N-CH 800V 1.9A TO252-3
沟道N 沟道
耐压800 V
连续漏极电流1.9 A
导通电阻2.8 Ω
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压800 V
连续漏极电流1.9 A
导通电阻2.8 Ω最大 · 1.1A
阈值电压3.9 V最大 · 120μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 42W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| 其他 | |
| Base Product Number | IPD80R2 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.1A, 10V |
| Series | CoolMOS™ CE |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |