Infineon TechnologiesGermany
MOSFET N-CH 950V 4A TO252-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage950 V
Continuous drain current4 A
On-resistance2 ΩMax · 1.7A
Gate threshold voltage3.5 VMax · 80μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 37W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| Other | |
| Base Product Number | IPD95R2 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 400 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.7A, 10V |
| Series | CoolMOS™ P7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA |