IPF023N08NF2SATMA1

在产单 FET,MOSFETPG-TO263-7-14

TRENCH 40<-<100V PG-TO263-7

沟道N 沟道
耐压80 V
连续漏极电流209 A
导通电阻2.3 mΩ

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技术参数

沟道N 沟道
耐压80 V
连续漏极电流209 A
导通电阻2.3 mΩ最大 · 100A
阈值电压3.8 V最大 · 139μA
电源
Current - Continuous Drain (Id) @ 25°C209A (Tc)
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)214W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case-
Supplier Device PackagePG-TO263-7-14
其他
Base Product NumberIPF023N
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6200 pF @ 40 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
SeriesStrongIRFET™ 2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.8V @ 139µA

技术资料