IPI65R190CFDXKSA2

Last Time BuySingle FETs, MOSFETsPG-TO262-3

MOSFET N-CH 650V 17.5A TO262-3

All alternatives

ChannelN-channel

Drain-source voltage650 V

Continuous drain current17.5 A

On-resistance190 mΩMax · 7.3A

Gate threshold voltage4.5 VMax · 700μA

Power
Current - Continuous Drain (Id) @ 25°C	17.5A (Tc)
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	151W (Tc)
Environment and package
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	PG-TO262-3
Other
Base Product Number	IPI65R190
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1850 pF @ 100 V
Mfr	Infineon Technologies
Product Status	Last Time Buy
Rds On (Max) @ Id, Vgs	190mOhm @ 7.3A, 10V
Series	CoolMOS™ CFD2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 700µA