Infineon TechnologiesGermany
MOSFET N-CH 650V 69A 8HSOF
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current69 A
On-resistance33 mΩMax · 28.9A
Gate threshold voltage4 VMax · 1.44mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 391W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerSFN |
| Supplier Device Package | PG-HSOF-8-2 |
| Other | |
| Base Product Number | IPT65R033 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 400 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 28.9A, 10V |
| Series | CoolMOS™ C7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1.44mA |