Infineon TechnologiesGermany
MOSFET N-CH 650V 8HSOF
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Power Dissipation (Max) | - |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Supplier Device Package | TOLL |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Series | CoolMOS™ CFD7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | - |
| Vgs(th) (Max) @ Id | - |
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