Infineon TechnologiesGermany
MOSFET N-CH 500V 18.5A TO247-3
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage500 V
Continuous drain current18.5 A
On-resistance190 mΩMax · 6.2A
Gate threshold voltage3.5 VMax · 510μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Power Dissipation (Max) | 127W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-1 |
| Other | |
| Base Product Number | IPW50R |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1137 pF @ 100 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6.2A, 13V |
| Series | CoolMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 510µA |