Infineon TechnologiesGermany
MOSFET N-CH 600V 109A TO247-4
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current109 A
On-resistance17 mΩMax · 58.2A
Gate threshold voltage4 VMax · 2.91mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 109A (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 446W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4 |
| Other | |
| Base Product Number | IPZ60R017 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9890 pF @ 400 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 58.2A, 10V |
| Series | CoolMOS™ C7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 2.91mA |