Infineon TechnologiesGermany
OPTIMOS LOWVOLTAGE POWER MOSFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current31 ~ 205 A
On-resistance1.35 mΩMax · 20A
Gate threshold voltage2 VMax · 51μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 205A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 107W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 9-PowerWDFN |
| Supplier Device Package | PG-WHTFN-9-1 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 20 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
| Series | OptiMOS™ 6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 51µA |
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