Infineon TechnologiesGermany
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
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View full reportTechnical parameters
Key specs
Drivers2
Driven configurationHigh and low side
Peak output current1 AMax
Supply voltage10 ~ 20 V
| Power | |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) | 1A, 1A |
| High Side Voltage - Max (Bootstrap) | 200 V |
| Logic Voltage - VIL, VIH | 0.7V, 2.2V |
| Voltage - Supply | 10V ~ 20V |
| AC and DC characteristics | |
| Rise / Fall Time (Typ) | 35ns, 20ns |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Supplier Device Package | 8-PDIP |
| Other | |
| Base Product Number | IR2011 |
| DigiKey Programmable | Not Verified |
| Driven Configuration | High-Side or Low-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Inverting |
| Mfr | Infineon Technologies |
| Number of Drivers | 2 |
| Product Status | Obsolete |
| Series | - |
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