Infineon TechnologiesGermany
MOSFET N-CH 100V 192A TO220AB
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current192 A
On-resistance4.2 mΩMax · 115A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 192A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 441W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Other | |
| Base Product Number | IRF100 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 50 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 115A, 10V |
| Series | HEXFET®, StrongIRFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Documents
DatasheetDatasheet · 621.1 KB · 2026-09-29Application NoteApplication Note · 2.0 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 663.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 113.8 KB · 2026-09-22EnvironmentalEnvironmental · 92.5 KB · 2026-09-22
Open document center