All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage250 V
Continuous drain current96 A
On-resistance12 mΩMax · 58A
Gate threshold voltage4 VMax · 270μA
Power
Current - Continuous Drain (Id) @ 25°C96A (Tc)
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)313W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AC
Other
Base Product NumberIRF250
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9915 pF @ 50 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs12mOhm @ 58A, 10V
SeriesStrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 270µA

Documents