Infineon TechnologiesGermany
MOSFET N-CH 40V 75A TO262
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current75 A
On-resistance2.3 mΩMax · 75A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power Dissipation (Max) | 300W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | TO-262 |
| Other | |
| Base Product Number | IRF2804 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 75A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |