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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage150 V
Continuous drain current41 A
On-resistance45 mΩMax · 25A
Gate threshold voltage4.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Drain to Source Voltage (Vdss)150 V
Environment and package
Mounting TypeSurface Mount
PackageCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2260 pF @ 25 V
MfrInfineon Technologies
Product StatusObsolete
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA

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