Infineon TechnologiesGermany
MOSFET N-CH 150V 900MA MICRO6
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage150 V
Continuous drain current900 mA
On-resistance1.2 ΩMax · 540mA
Gate threshold voltage5.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | Micro6™(TSOP-6) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 88 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 540mA, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
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