Infineon TechnologiesGermany
MOSFET 2P-CH 20V 2.9A 6TSOP
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 960mW |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Other | |
| Base Product Number | IRF58 |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.9A, 4.5V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
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