Infineon TechnologiesGermany
MOSFET N-CH 60V 130A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current130 A
On-resistance2.9 mΩMax · 80A
Gate threshold voltage3.7 VMax · 150μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 96W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | DirectFET™ Isometric ME |
| Supplier Device Package | DirectFET™ Isometric ME |
| Other | |
| Base Product Number | IRF60DM206 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6530 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 80A, 10V |
| Series | StrongIRFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.7V @ 150µA |