Infineon TechnologiesGermany
MOSFET N-CH 200V 9.3A TO220AB
Infineon IRF630NPBF is an N-channel HEXFET power MOSFET in TO-220 package, with 200V breakdown voltage, 9.3A continuous drain current, max 0.30Ω on-resistance, operating temperature -55 to +175°C, featuring avalanche rating and fast switchingChecked against the datasheet
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current9.3 ATC=25°C，VGS=10V
On-resistance300 mΩMax
Gate threshold voltage4 VMax · 250μA
Datasheet-verified parameters
26 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Channel | N | |
| Drain-Source Breakdown Voltage | 200V | |
| Continuous Drain Current | 9.3A @ TC=25°C, VGS=10V | |
| On-Resistance | 0.30Ω max | |
| Package | TO-220 | |
| Operating Junction Temperature | -55 to +175 °C |
All parameters (21)
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 82W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Other | |
| Base Product Number | IRF630 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Pinout and package
PackageTO-220
| Pin | Name | Function | Source |
|---|---|---|---|
| 1 | Gate | ||
| 2 | Drain | ||
| 3 | Source |
Documents
Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.