Infineon TechnologiesGermany
MOSFET N-CH 20V 26A DIRECTFET
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current26 ~ 85 A
On-resistance3.8 mΩMax · 26A
Gate threshold voltage2.2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 85A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Supplier Device Package | DIRECTFET™ MT |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 26A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Documents
No documents are linked to this part yet.