Infineon TechnologiesGermany
MOSFET N-CH 20V 11A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current11 ~ 48 A
On-resistance13 mΩMax · 11A
Gate threshold voltage2.3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 48A (Tc) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MQ |
| Supplier Device Package | DIRECTFET™ MQ |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 10 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |