Infineon TechnologiesGermany
MOSFET N-CH 30V 19A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current19 ~ 106 A
On-resistance5 mΩMax · 19A
Gate threshold voltage2.25 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 106A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Supplier Device Package | DIRECTFET™ MX |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3765 pF @ 20 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 19A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Documents
DatasheetDatasheet · 283.0 KB · 2026-09-22Application NoteApplication Note · 2.0 MB · 2026-09-22Application NoteApplication Note · 1.1 MB · 2026-09-22Application NoteApplication Note · 663.0 KB · 2026-09-22Quality & ReliabilityQuality & Reliability · 116.6 KB · 2026-09-22Package DrawingPackage Drawing · 9.6 KB · 2026-09-21
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