Infineon TechnologiesGermany
MOSFET N-CH 200V 4.6A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage200 V
Continuous drain current4.6 ~ 26 A
On-resistance59.9 mΩMax · 5.5A
Gate threshold voltage4.9 VMax · 150μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 26A (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Supplier Device Package | DIRECTFET™ MZ |
| Other | |
| Base Product Number | IRF6641 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 59.9mOhm @ 5.5A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.9V @ 150µA |
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