Infineon TechnologiesGermany
MOSFET N-CH 100V 10.3A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current10.3 ~ 60 A
On-resistance13 mΩMax · 10.3A
Gate threshold voltage4.8 VMax · 150μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Ta), 60A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | DirectFET™ Isometric MN |
| Supplier Device Package | DIRECTFET™ MN |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 150µA |