Infineon TechnologiesGermany
MOSFET N-CH 100V 4.2A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage100 V
Continuous drain current4.2 ~ 19 A
On-resistance62 mΩMax · 5A
Gate threshold voltage5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta), 19A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | DirectFET™ Isometric SH |
| Supplier Device Package | DIRECTFET™ SH |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 5A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
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