MOSFET N-CH 25V 17A DIRECTFET
沟道N 沟道
耐压25 V
连续漏极电流17 ~ 68 A
导通电阻4.9 mΩ
全部替代型号
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沟道N 沟道
耐压25 V
连续漏极电流17 ~ 68 A
导通电阻4.9 mΩ最大 · 17A
阈值电压2.4 V最大 · 50μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 68A (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.2W (Ta), 36W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Supplier Device Package | DIRECTFET™ SQ |
| 其他 | |
| Base Product Number | IRF6712 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 13 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 17A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |