Infineon TechnologiesGermany
MOSFET N CH 25V 19A DIRECTFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage25 V
Continuous drain current19 ~ 74 A
On-resistance3.7 mΩMax · 19A
Gate threshold voltage2.1 VMax · 35μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 74A (Tc) |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Supplier Device Package | DIRECTFET™ SQ |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 13 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 19A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
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