IRF7204PBF

MOSFET P-CH 20V 5.3A 8SO

Infineon IRF7204PBF is a P-channel HEXFET Power MOSFET in SO-8 package, with -20V breakdown voltage, -5.3A continuous drain current, and 0.060Ω max on-resistance, designed for consumer applications.Checked against the datasheet

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Technical parameters

Key specs

ChannelP-channel

Drain-source voltage-20 VMin: -20 V (VGS = 0V，ID = -250μA)

Continuous drain current-5.3 AMax: -5.3 A (TA = 25°C，VGS = 10V)

On-resistance60 mΩMax · Max: 0.060 Ω (VGS = -10V，ID = -5.3A)

Gate threshold voltage-2.5 VMax · Max: -2.5 V (VDS = VGS，ID = -250μA)

Datasheet-verified parameters

18 items

Parameter	Value and test conditions	Source
Channel	P-Channel
Drain-to-Source Breakdown Voltage	Min: -20 V (VGS = 0V, ID = -250μA)
Continuous Drain Current	Max: -5.3 A (TA = 25°C, VGS = 10V)
Static Drain-to-Source On-Resistance	Max: 0.060 Ω (VGS = -10V, ID = -5.3A)
Gate Threshold Voltage	Min: -1.0 V, Max: -2.5 V (VDS = VGS, ID = -250μA)
Package	SO-8
Junction and Storage Temperature Range	-55 to +150 °C
Market Qualification	Consumer market
RoHS Compliance	Lead-Free
Pulsed Drain Current	Max: -21 A
Power Dissipation	Max: 2.5 W (TC = 25°C)
Gate-to-Source Voltage	Max: ± 12 V
Forward Transconductance	Typ: 7.9 S (VDS = -15V, ID = -5.3A)
Drain-to-Source Leakage Current	Max: -25 μA (VDS = -16V, VGS = 0V)
Total Gate Charge	Typ: 25 nC (ID = -5.3A)
Input Capacitance	Typ: 860 pF (VGS = 0V)
Output Capacitance	Typ: 750 pF (VDS = -10V)
Maximum Junction-to-Ambient Thermal Resistance	Max: 50 °C/W

All parameters (20)ExpandCollapse

Power
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Power Dissipation (Max)	2.5W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Other
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 10 V
Mfr	Infineon Technologies
Product Status	Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs	60mOhm @ 5.3A, 10V
Series	HEXFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Pinout and package

PackageSO-8

Pin	Name	Function	Source
1		Source
2		Source
3		Source
4		Gate
5		Drain
6		Drain
7		Drain
8		Drain

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DatasheetDatasheet · 252.0 KB · 2026-10-26

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