沟道N 沟道
耐压450 V
连续漏极电流8.8 A
导通电阻630 mΩ
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沟道N 沟道
耐压450 V
连续漏极电流8.8 A
导通电阻630 mΩ最大 · 5.3A
阈值电压4 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Drain to Source Voltage (Vdss) | 450 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | - |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| 其他 | |
| Base Product Number | IRF744 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 5.3A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
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