MOSFET P-CH 20V 8.2A MICRO8
沟道P 沟道
耐压20 V
连续漏极电流8.2 A
导通电阻20 mΩ
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沟道P 沟道
耐压20 V
连续漏极电流8.2 A
导通电阻20 mΩ最大 · 7A
阈值电压1.2 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Power Dissipation (Max) | 1.8W (Ta) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Supplier Device Package | Micro8™ |
| 其他 | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 10 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |