All alternatives

View full report

Technical parameters

Power
Current - Continuous Drain (Id) @ 25°C4.5A
Drain to Source Voltage (Vdss)30V
Power - Max1W
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP
Other
Base Product NumberIRF775
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1464pF @ 25V
MfrInfineon Technologies
Product StatusObsolete
Rds On (Max) @ Id, Vgs35mOhm @ 4.5A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Documents