全部替代型号
查看完整报告技术参数
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Power - Max | 1.2W |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
| 其他 | |
| Base Product Number | IRF7757 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 15V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4.8A, 4.5V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
器件图片
技术资料
该型号暂未收录资料。