IRF830B

在产单 FET,MOSFETTO-220

N-CHANNEL POWER MOSFET

沟道N 沟道
耐压500 V
连续漏极电流4.5 A
导通电阻1.5 Ω

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技术参数

沟道N 沟道
耐压500 V
连续漏极电流4.5 A
导通电阻1.5 Ω最大 · 2.25A
阈值电压4 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)73W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1050 pF @ 25 V
MfrFairchild Semiconductor
Product StatusActive
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.25A, 10V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

技术资料