IRF9953

Снят с производстваFET, MOSFET Arrays

MOSFET 2P-CH 30V 2.3A 8SO

Все аналоги

Питание
Current - Continuous Drain (Id) @ 25°C	2.3A
Drain to Source Voltage (Vdss)	30V
Power - Max	2W
Условия эксплуатации и корпус
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Другое
Base Product Number	IRF995
Configuration	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V
Mfr	Infineon Technologies
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	250mOhm @ 1A, 10V
Series	HEXFET®
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1V @ 250µA