International RectifierUnited States
N-CHANNEL HERMETIC MOS HEXFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage600 V
Continuous drain current10.6 A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.6A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Power Dissipation (Max) | 150W |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Supplier Device Package | TO-204AA (TO-3) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Mfr | International Rectifier |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | - |
| Vgs(th) (Max) @ Id | - |
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