Harris CorporationUnited States
N-CHANNEL POWER MOSFET
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage150 V
Continuous drain current3.5 A
On-resistance800 mΩMax · 2A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 20W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Package / Case | TO-205AF Metal Can |
| Supplier Device Package | TO-205AF (TO-39) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
| Mfr | Harris Corporation |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Documents
No documents are linked to this part yet.