Infineon TechnologiesGermany
MOSFET 2N-CH 100V 2.3A 8PQFN
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Drain to Source Voltage (Vdss) | 100V |
| Power - Max | 2.3W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
| Other | |
| Base Product Number | IRFHM792 |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 10µA |