Infineon TechnologiesGermany
MOSFET N-CH 30V 21A PQFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current21 ~ 40 A
On-resistance3.8 mΩMax · 20A
Gate threshold voltage2.35 VMax · 50μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-VQFN Exposed Pad |
| Supplier Device Package | PQFN (3x3) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2155 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |