Infineon TechnologiesGermany
MOSFET P-CH 30V 11A 3X3 PQFN
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current11 ~ 24 A
On-resistance10 mΩMax · 11A
Gate threshold voltage2.4 VMax · 25μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 24A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PQFN (3x3) |
| Other | |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1543 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 20V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
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