Infineon TechnologiesGermany
MOSFET N-CH 30V 8.8A/19A TSDSON
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current8.8 ~ 19 A
On-resistance16 mΩMax · 8.5A
Gate threshold voltage2.35 VMax · 25μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 19A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | 6-PowerVDFN |
| Supplier Device Package | 6-PQFN (2x2) (DFN2020) |
| Other | |
| Base Product Number | IRFHS8342 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8.5A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |