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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage-30 V
Continuous drain current-8.52 ATC = 25°C,VGS = -10V (Package Limited)
On-resistance37 mΩMax · VGS = -10V
Gate threshold voltage2.4 VMax · 25μA

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-to-Source VoltageMax -30 V
Continuous Drain CurrentMax -8.52 A @ TC = 25°C, VGS = -10V (Package Limited)
On-ResistanceMax 37 mΩ @ VGS = -10V
PackagePQFN 2mm x 2mm
Operating Junction Temperature-55 to +150 °C
Qualification LevelIndustrial (per JEDEC JESD47F guidelines)
RoHS CompliantYes
Halogen FreeContaining no Lead, no Bromide and no Halogen
Gate-to-Source VoltageMax ±20 V
Pulsed Drain CurrentMax -52 A
Power DissipationMax 2.1 W @ TA = 25°C
Gate ChargeTyp 13 nC
Thermal Resistance to PCB≤ 13 °C/W
Storage Temperature-55 to +150 °C
Moisture Sensitivity LevelMSL1 (per IPC/JEDEC J-STD-020D)
All parameters (21)ExpandCollapse
Power
Current - Continuous Drain (Id) @ 25°C6A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.1W (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case6-PowerVDFN
Supplier Device Package6-PQFN (2x2) (DFN2020)
Other
Base Product NumberIRFHS9301
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 25 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs37mOhm @ 7.8A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.4V @ 25µA

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