Infineon TechnologiesGermany
MOSFET N-CH 55V 5.1A SOT223
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage55 V
Continuous drain current5.1 A
On-resistance57.5 mΩMax · 3.1A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 57.5mOhm @ 3.1A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |