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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage300 V
Continuous drain current38 A
On-resistance69 mΩMax · 24A
Gate threshold voltage5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)341W (Tc)
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247AC
Other
Base Product NumberIRFP4137
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5168 pF @ 50 V
MfrInfineon Technologies
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs69mOhm @ 24A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

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