IRFR010

MOSFET N-CH 50V 8.2A DPAK

All alternatives

ChannelN-channel

Drain-source voltage50 V

Continuous drain current8.2 A

On-resistance200 mΩMax · 4.6A

Gate threshold voltage4 VMax · 250μA

Power
Current - Continuous Drain (Id) @ 25°C	8.2A (Tc)
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	25W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package	Tube
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK
Other
Base Product Number	IRFR010
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Mfr	Vishay Siliconix
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	200mOhm @ 4.6A, 10V
Series	-
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

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