IRFR6215TRLPBF

MOSFET P-CH 150V 13A DPAK

P-Channel HEXFET Power MOSFET, -150V breakdown voltage, -13A continuous drain current, D-Pak package, operating temperature -55 to +175°C, fast switching and fully avalanche rated.Checked against the datasheet

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Technical parameters

Key specs

ChannelP-channel

Drain-source voltage-150 VVGS = 0V，ID = -250μA

Continuous drain current-13 ATC = 25°C，VGS = -10V

On-resistance295 mΩMax · VGS = -10V，ID = -6.6A，TJ = 25°C

Gate threshold voltage-4 VMax · VDS = VGS，ID = -250μA

Datasheet-verified parameters

33 items

Parameter	Value and test conditions	Source
Channel	P-Channel
Drain-to-Source Breakdown Voltage	Min: -150 V, VGS = 0V, ID = -250μA
Continuous Drain Current	Max: -13 A, TC = 25°C, VGS = -10V
Static Drain-to-Source On-Resistance	Max: 0.295 Ω, VGS = -10V, ID = -6.6A, TJ = 25°C
Gate Threshold Voltage	Min: -2.0 V, Max: -4.0 V, VDS = VGS, ID = -250μA
Package	D-Pak (TO-252AA)
Operating Junction Temperature Range	-55 to +175 °C
Qualification Level	Industrial (per JEDEC JESD47F)
RoHS Compliant	Yes
Maximum Power Dissipation	Max: 110 W, TC = 25°C
Pulsed Drain Current	Max: -44 A
Gate-to-Source Voltage	Max: ±20 V
Single Pulse Avalanche Energy	Max: 310 mJ
Avalanche Current	Max: -6.6 A
Repetitive Avalanche Energy	Max: 11 mJ
Peak Diode Recovery dv/dt	Max: 5.0 V/ns
Soldering Temperature	Max: 300 °C, for 10 seconds (1.6mm from case)
Junction-to-Case Thermal Resistance	Max: 1.4 °C/W
Junction-to-Ambient Thermal Resistance	Max: 50 °C/W (PCB Mount), Max: 110 °C/W
Drain-to-Source Leakage Current	Max: -25 μA, VDS = -150V, VGS = 0V, TJ = 25°C
Gate-to-Source Forward Leakage	Max: -100 nA, VGS = -20V
Total Gate Charge	Max: 66 nC, ID = -6.6A, VDS = -120V, VGS = -10V
Turn-On Delay Time	Typ: 14 ns, VDD = -75V, ID = -6.6A, RG = 6.8Ω, RD = 12Ω
Rise Time	Typ: 36 ns, VDD = -75V, ID = -6.6A, RG = 6.8Ω, RD = 12Ω
Turn-Off Delay Time	Typ: 53 ns, VDD = -75V, ID = -6.6A, RG = 6.8Ω, RD = 12Ω
Fall Time	Typ: 37 ns, VDD = -75V, ID = -6.6A, RG = 6.8Ω, RD = 12Ω
Input Capacitance	Typ: 860 pF, VGS = 0V, VDS = -25V, f = 1.0MHz
Output Capacitance	Typ: 220 pF, VGS = 0V, VDS = -25V, f = 1.0MHz
Reverse Transfer Capacitance	Typ: 130 pF, VGS = 0V, VDS = -25V, f = 1.0MHz
Continuous Source Current (Body Diode)	Max: -13 A
Diode Forward Voltage	Max: -1.6 V, TJ = 25°C, IS = -6.6A, VGS = 0V
Reverse Recovery Time	Typ: 160 ns, Max: 240 ns, TJ = 25°C, IF = -6.6A, di/dt = 100A/μs
Reverse Recovery Charge	Typ: 1.2 μC, Max: 1.7 μC, TJ = 25°C, IF = -6.6A, di/dt = 100A/μs

All parameters (21)ExpandCollapse

Power
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	110W (Tc)
Environment and package
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	D-Pak
Other
Base Product Number	IRFR6215
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
Mfr	Infineon Technologies
Product Status	Active
Rds On (Max) @ Id, Vgs	295mOhm @ 6.6A, 10V
Series	HEXFET®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

Pinout and package

PackageD-Pak (TO-252AA)

Pin	Name	Function	Source
1		Gate
2		Drain
3		Source

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