Infineon TechnologiesGermany
MOSFET N-CH 40V 56A TO252
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage40 V
Continuous drain current56 A
On-resistance3.9 mΩMax · 56A
Gate threshold voltage3.9 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 98W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252, (D-Pak) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 56A, 10V |
| Series | HEXFET®, StrongIRFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
Documents
No documents are linked to this part yet.