Infineon TechnologiesGermany
MOSFET N-CH 75V 240A D2PAK
All alternatives
View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage75 V
Continuous drain current240 A
On-resistance2.6 mΩMax · 160A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 370W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Supplier Device Package | D2PAK (7-Lead) |
| Other | |
| Base Product Number | IRFS3107 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 50 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 160A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
Documents
No documents are linked to this part yet.