Infineon TechnologiesGermany
MOSFET N-CH 150V 105A D2PAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage150 V
Continuous drain current105 A
On-resistance11.8 mΩMax · 63A
Gate threshold voltage5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 380W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Supplier Device Package | D2PAK (7-Lead) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5320 pF @ 50 V |
| Mfr | Infineon Technologies |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 11.8mOhm @ 63A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |