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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage40 V
Continuous drain current240 A
On-resistance750 µΩMax · 100A
Gate threshold voltage3.9 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Power Dissipation (Max)375W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageD2PAK (7-Lead)
Other
Base Product NumberIRFS7430
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds13975 pF @ 25 V
MfrInfineon Technologies
Product StatusActive
Rds On (Max) @ Id, Vgs0.75mOhm @ 100A, 10V
SeriesHEXFET®, StrongIRFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 250µA

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