IRL1104S

停产单 FET,MOSFETD2PAK

MOSFET N-CH 40V 104A D2PAK

沟道N 沟道
耐压40 V
连续漏极电流104 A
导通电阻8 mΩ

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技术参数

沟道N 沟道
耐压40 V
连续漏极电流104 A
导通电阻8 mΩ最大 · 62A
阈值电压1 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C104A (Tc)
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)2.4W (Ta), 167W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
其他
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3445 pF @ 25 V
MfrInfineon Technologies
Product StatusObsolete
Rds On (Max) @ Id, Vgs8mOhm @ 62A, 10V
SeriesHEXFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id1V @ 250µA

技术资料