Infineon TechnologiesGermany
MOSFET N-CH 55V 75A D2PAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage55 V
Continuous drain current75 A
On-resistance8 mΩMax · 52A
Gate threshold voltage3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Cut Tape (CT) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 52A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |